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首頁 >1N5819>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
1N5819RL	文件：75.98 Kbytes Page：7 Pages	Axial Lead Rectifiers Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?volt 文件：75.98 Kbytes 頁數(shù)：7 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
1N5819RL	文件：249.43 Kbytes Page：9 Pages	Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS This series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency 文件：249.43 Kbytes 頁數(shù)：9 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
1N5819RLG	文件：249.43 Kbytes Page：9 Pages	Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS This series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency 文件：249.43 Kbytes 頁數(shù)：9 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
1N5819RLG	文件：75.98 Kbytes Page：7 Pages	Axial Lead Rectifiers Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?volt 文件：75.98 Kbytes 頁數(shù)：7 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
1N5819S	文件：989.93 Kbytes Page：2 Pages	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren 文件：989.93 Kbytes 頁數(shù)：2 Pages	SY 順燁電子	SY
1N5819S	文件：52.22 Kbytes Page：2 Pages	SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli 文件：52.22 Kbytes 頁數(shù)：2 Pages	BILIN 銀河微電	BILIN
1N5819S	文件：1.04528 Mbytes Page：2 Pages	Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli 文件：1.04528 Mbytes 頁數(shù)：2 Pages	LUGUANG 魯光電子	LUGUANG
1N5819S	文件：624.62 Kbytes Page：2 Pages	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current -1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High current 文件：624.62 Kbytes 頁數(shù)：2 Pages	CHENDA 辰達半導(dǎo)體	CHENDA
1N5819S	文件：242.91 Kbytes Page：2 Pages	SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli 文件：242.91 Kbytes 頁數(shù)：2 Pages	DSK	DSK
1N5819S	文件：989.57 Kbytes Page：2 Pages	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren 文件：989.57 Kbytes 頁數(shù)：2 Pages	SHUNYE 順燁電子	SHUNYE

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產(chǎn)品屬性

產(chǎn)品編號：
1N5819
制造商：
Taiwan Semiconductor Corporation
類別：
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
包裝：
卷帶（TR）
二極管類型：
肖特基
電流 - 平均整流 (Io)：
1A
速度：
快速恢復(fù) =< 500ns，> 200mA（Io）
不同?Vr、F 時電容：
55pF @ 4V，1MHz
安裝類型：
通孔
封裝/外殼：
DO-204AL，DO-41，軸向
供應(yīng)商器件封裝：
DO-204AL（DO-41）
工作溫度 - 結(jié)：
-55°C ~ 125°C
描述：
DIODE SCHOTTKY 40V 1A DO204AL

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
標(biāo)準(zhǔn)國際(香港)有限公司	1N5819	0N	13+	標(biāo)準(zhǔn)	5000	公司原裝現(xiàn)貨	詢價
深圳市樂創(chuàng)天科技有限公司	1N5819	MIC	2013	805	200	全新原裝正品現(xiàn)貨	詢價
深圳市榮澤信電子科技有限公司	1N5819	TOSHIBA	23+	SOT-323	13	全新原裝的現(xiàn)貨	詢價
深圳市鴻昌盛電子科技有限公司	1N5819		2015+		300	公司現(xiàn)貨庫存	詢價
深圳市億智騰科技有限公司	1N5819	國產(chǎn)	24+	DO214	6580	原裝現(xiàn)貨!	詢價
深圳市明嘉萊科技有限公司	1N5819		23+	SMD	618000	明嘉萊只做原裝正品現(xiàn)貨	詢價
深圳市實中創(chuàng)科技有限公司	1N5819	DIODES	23+	SOD123	4000	原裝現(xiàn)貨低價出售	詢價
中天科工半導(dǎo)體（深圳）有限公司	1N5819	KEXIN/科信	25+	SMA	32000	KEXIN/科信全新特價1N5819即刻詢購立享優(yōu)惠#長期有貨	詢價
深圳市弘為電子有限公司	1N5819	TOS	24+	DO-214	1500	原裝現(xiàn)貨假一罰十	詢價
深圳市英瑞爾電子科技有限公司	1N5819	N/A	24+	兩腳直插	2500	進口原裝現(xiàn)貨/假一賠十	詢價

更多1N5819供應(yīng)商更新時間2025-8-8 16:20:00

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