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UNS1K58A

Marking：1K58A；Package：DO-214A；Surface Mount Transient Voltage Suppressors

Features Glasspassivatedjunction. Excellentclampingcapability. Repetitiverate(dutycycle):0.01. Lowprofilepackageandlowinductance. 1000APeakPulsepowercapabilityat8/20uswaveform. Fastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Hightemperaturesolderi

UNS1K58CA

Marking：1K58CA；Package：DO-214A；Surface Mount Transient Voltage Suppressors

Features Glasspassivatedjunction. Excellentclampingcapability. Repetitiverate(dutycycle):0.01. Lowprofilepackageandlowinductance. 1000APeakPulsepowercapabilityat8/20uswaveform. Fastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Hightemperaturesolderi

ZXMS6004FFQ-7

Marking：1K6；Package：SOT23F；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features ?CompactHighPowerDissipationPackage ?LowInputCurrent ?LogicLevelInput(3.3Vand5V) ?ShortCircuitProtectionwithAutoRestart ?OvervoltageProtection(ActiveClamp) ?ThermalShutdownwithAutoRestart ?OvercurrentProtection ?InputProtection(ESD) ?HighContin

ZXMS6008FFQ-7

Marking：1K8；Package：SOT23F；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET

Features ?CompactHighPowerDissipationPackage ?LowInputCurrent ?LogicLevelInput(3.3Vand5V) ?ShortCircuitProtectionwithAutoRestart ?OvervoltageProtection(ActiveClamp) ?ThermalShutdownwithAutoRestart ?OvercurrentProtection ?InputProtection(ESD) ?HighContin

BC848B

Marking：1Ks；Package：SOT-23；NPN Silicon AF Transistors

BC848BW

Marking：1Ks；Package：SOT-323；NPN Silicon AF Transistors

BCV61B

Marking：1K-；Package：SOT-143B；Low VCEsat (BISS) transistors

BCV61B

Marking：1Ks；Package：SOT-143；NPN Silicon Double Transistor

BCV61B

Marking：1Ks；Package：SOT-143；NPN Silicon Double Transistor

INA234AIYBJR

Marking：1KX；Package：DSBGA；INA234 28-V, 12-Bit, Current, Voltage, and Power Monitor With an I2C Interface