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1G

型號(hào)：S-LBC847BTT1G；Package：SC-89；General Purpose Transistors NPN Silicon

1G

型號(hào)：S-LBC847CLT3G；Package：SOT-23；General Purpose Transistors NPN Silicon

1G

型號(hào)：S-LBC847CTT1G；Package：SC-89；General Purpose Transistors NPN Silicon

1G

型號(hào)：SM1G；SURFACE MOUNT GLASS PASSIVATED RECTIFIERS

1G

型號(hào)：ZD5Z75V；Package：SOD-523FL；150mW Surface Mount Zener Diodes-2.4V-75V

1G*

型號(hào)：BC847C；Package：SOT-23；NPN Silicon AF Transistors

?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes: BC856...-BC860...(PNP) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101

1GT

型號(hào)：BC847CDW；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES ?Twotransistorsinonepackage ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors

1Gt

型號(hào)：BC847CW；Package：SOT-323；NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

1G6

型號(hào)：CXT5551；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

Features Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.180V)

1G**

型號(hào)：IRLML2502；Package：SOT-23；HEXFET Power MOSFET

Description TheseN-ChannelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor,provi