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絲印：1G*；Package：SOT-23；NPN Silicon AF Transistors

? For AF input stages and driver applications ? High current gain ? Low collector-emitter saturation voltage ? Low noise between 30 Hz and 15 kHz ? Complementary types: BC856...-BC860...(PNP) ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101

文件：216.64 Kbytes 頁(yè)數(shù)：8 Pages

Infineon

英飛凌

絲印：1G*；Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in small plastic packages. Features ■ Low current ■ Low voltage ■ Three different gain selections Applications ■ General-purpose switching and amplification

文件：96.95 Kbytes 頁(yè)數(shù)：15 Pages

恩XP

絲?。?strong>1G*；Package：SOT-23；NPN Silicon AF Transistors

文件：183.85 Kbytes 頁(yè)數(shù)：19 Pages

Infineon

英飛凌

絲?。?strong>1G*；Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

文件：104.72 Kbytes 頁(yè)數(shù)：15 Pages

恩XP

絲印：1G*；Package：SOT-323；45 V, 100 mA NPN general-purpose transistors

文件：104.72 Kbytes 頁(yè)數(shù)：15 Pages

恩XP

絲印：1G**；Package：SOT-23；HEXFET Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provi

文件：126.69 Kbytes 頁(yè)數(shù)：9 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/1g/marking.html">1G**；Package：SOT-23；N-Channel MOSFET

文件：1.46526 Mbytes 頁(yè)數(shù)：5 Pages

KEXIN

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