描述 Description

CoolGaN? and similar GaN switches require a continuous gate current of a few mA in their on state. Besides, due to low threshold voltage and extremely fast switching transients, a negative off voltage level may be needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations.

Infineons GaN EiceDRIVER? solves these issues with very low effort. The two output stages shown below enable a zero “off level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping.

特性 Features

? Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN?, GIT technology based products)

?? – low driving impedance (on-resistance 0.85 ? source, 0.35 ? sink)

?? – resistor programmable gate current (typ. 10 mA) in steady “on” state

?? – programmable negative gate voltage to completely avoid spurious turn-on

? Single output supply voltage (typ. 8 V, floating)

? Switching behavior independent of duty-cycle (2 off voltage levels)

? Differential concept to ensure negative gate drive voltage under any condition

? Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)

? Galvanic input-to-output isolation based on coreless transformer (CT) technology

? Common mode transient immunity (CMTI) > 200 V/ns

? 3 package versions

?? – 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)

?? – 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)

?? – 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for reinforced isolation

? Fully qualified according to JEDEC for Industrial Applications