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CDSOD323-T18C

Marking:1C;Package:SOD-323;Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components.

Features ProtectsonelineoroneI/Oport Bidirectionalconfiguration ESDprotection30kVmax. Lowcapacitance:~3pFtypical

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

DAN217UM

Marking:1C;Package:UMD3F;Switching Diode

Features 1)Smallmold,flatleadtype.(UMD3F) 2)Highreliability Applications Highspeedswitching Construction Siliconepitaxialplaner

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

FMMTA20

Marking:1C;Package:SOT-23;SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23NPNSILICONPLANARSMALLSIGNALTRANSISTOR PARTMARKINGDETAIL-FMMTA20-1C FMMTA20R-3C COMPLEMENTARYTYPE-FMMTA70

Zetex

Zetex Semiconductors

MM3Z2V4

Marking:1C;Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.200mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

NRVBSS16HE

Marking:1C;Package:SOD-323HE;Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V

Features ?VeryLowProfile?TypicalHeightof0.68mm ?LowPowerLoss,HighEfficiency ?MoistureSensitivityLevel1perJ?STD?020 ?ULFlammability94V?0Classification ?RoHSCompliant/GreenMoldingCompound ?NRVBPrefixforAutomotiveandOtherApplicationsRequiring UniqueSitea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PESD5V0U1USL

Marking:1C;Package:DFN1006-2;Ultra low capacitance unidirectional ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodeina DFN1006-2(SOD882-S1)ultrasmallandleadlessSurface-MountedDevice(SMD)package, designedtoprotectonesignallineagainstESD,highsurgecurrentsandothertransients. 2.F

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMPB11EN

Marking:1C;Package:SOT1220;30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?Veryfastswitching ?Smalland

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

SS16HE

Marking:1C;Package:SOD-323HE;Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V

Features ?VeryLowProfile?TypicalHeightof0.68mm ?LowPowerLoss,HighEfficiency ?MoistureSensitivityLevel1perJ?STD?020 ?ULFlammability94V?0Classification ?RoHSCompliant/GreenMoldingCompound ?NRVBPrefixforAutomotiveandOtherApplicationsRequiring UniqueSitea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAV99FM

Marking:1C;Package:SOT-323;Switching Diode (High speed switching)

ROHMRohm

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BAV99FMFH

Marking:1C;Package:SOT-323;Switching Diode (High speed switching)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    1C

  • 制造商:

    LG Corporation

  • 功能描述:

    COMPRESSOR ASM V

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