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15N

型號：744760115A；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

15N

型號：744760115GA；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

15N

型號：744762115GA；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

15N

型號：LDN8205ST1G；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

15N

型號：LDN8205ST3G；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

15N10

型號：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS=100V,ID=15A RDS(ON),95mΩ(Typ)@VGS=10V RDS(ON),100mΩ(Typ)@VGS=4.5V LowTotalGateCharge LowReverseTransferCapacitance Improveddv/dtCapability FastSwitchingSpeed

15N10TFYWCP

型號：15N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The15N10usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

15N10BTFYWCP

型號：15N10B；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10BTO-252usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

15N10GTFYWCP

型號：15N10G；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

15N04NM5

型號：ISC015N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

Features ?Batterypoweredapplication ?LVmotordrives ?Verylowon-resistanceRDS(on) ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?175°Crated