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絲印：12；Package：SOT23；60 V, 300 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Suitable for logic level gate drive sources ? Very fast switching ? Surface-mounted package ? Trench MOSFET technology 1.3 Appl

文件：855.83 Kbytes 頁數：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?strong>12；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 頁數：5 Pages

YFWDIODE

佑風微電子

絲?。?strong>12；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description ? 2-Input AND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.57 Kbytes 頁數：9 Pages

TOSHIBA

東芝

絲?。?strong>12；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description ? 2-Input AND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.23 Kbytes 頁數：9 Pages

TOSHIBA

東芝

絲?。?strong>12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features ? 500W peak pulse power (8/20μs) ? Protects one data or power line ? Ultra low leakage: nA level ? Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V ? Ultra low clamping voltage ? Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 頁數：7 Pages

SY

順燁電子

絲?。?strong>12；Package：178M12CP；Three-Terminal Regulator

STRUTURE : Silicon Monolithic Intergrated Circuit TYPE : Three-Terminal Regulator FEATURES : Output current up to 0.5A

文件：359.61 Kbytes 頁數：6 Pages

ROHM

羅姆

絲?。?strong>12；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications ? Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 頁數：6 Pages

TOSHIBA

東芝

絲印：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features ? Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Total

文件：200.49 Kbytes 頁數：5 Pages

DIODES

美臺半導體

絲印：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features ? Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Total

文件：780.3 Kbytes 頁數：5 Pages

DIODES

美臺半導體

絲?。?strong>12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 550W peak pulse power（8 /20μs) Protects one data or power line Ultra low leakage：nA level Operating voltage：12V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC

文件：2.16028 Mbytes 頁數：4 Pages

SY

順燁電子