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11N

型號：LNB2294LT1G；Package：SOT23LC；110V N-Channel Enhancement-Mode MOSFET VDS= 110V

11NBTI

型號：F0111EVB-2P6；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

11NBTI

型號：F0111EVB-3P5；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

11NBTI

型號：F0111NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

11NBTI

型號：F0111NBTI8；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

11N08NM5

型號：IPTC011N08NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features ?N-channel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

11N1LF2

型號：ISZ113N10NM5LF2；Package：PG-TSDSON-8；OptiMOSTM 5 Linear FET 2, 100 V

Features ?IdealforsoftstartinPower-over-Ethernet(PoE)application ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

11N60C2

型號：SPA11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

11N60C3

型號：SPA11N60C3；Package：PG-TO220FP；Cool MOS? Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute)

11N60C3

型號：SPA11N60C3E8185；Package：PG-TO220；Cool MOS? Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute)