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絲印：11；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風微電子

絲印：11；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description ? 2-Input NAND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.33 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：11；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description ? 2-Input NAND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：171.66 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?strong>11；Package：X1-DFN1006-2；22V UNI-DIRECTIONAL TVS DIODE

Features ? Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Total

文件：199.9 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

絲印：11；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES ? For surface mounted application ? Silicon epitaxial planar diode ? Ultra small surface mount package ? Low leakage current ? 2 tolerance device of Vz ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3)

文件：427.4 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

絲?。?strong>11；Package：SOT-23；Small Signal Diodes

文件：88.57 Kbytes 頁數(shù)：4 Pages

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

絲?。?strong>11；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ● Low Quiescent Current 5.5μA typ.(A version) 5.0μA typ.(B version) ● Operating Voltage 4.0V to 40V ● Operating Temperature Ta=-40 C to 125°C ● Output Voltage Accuracy VO 1.0(Ta=25 C) VO 2.0(Ta=-40 C to 125°C) ● Output Current IO(min.)=200mA ● ON/OFF Control A ver. only ● Corres

文件：786.88 Kbytes 頁數(shù)：21 Pages

NJRCNew Japan Radio

新日本無線株式會社

絲?。?strong>11；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits ? Very low collector-emitter saturation voltage VCEsat ? High collector current capabi

文件：296.09 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?strong>11；Package：SC-75；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：202.93 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?strong>11；Package：SOT23；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：202.93 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司