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PDTA115TK

Marking：11；Package：SC-59；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA115TU

Marking：11；Package：SC-70；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143TEF

Marking：11；Package：SOT490；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143TEF

Marking：11；Package：SOT490；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143TEF

Marking：11；Package：SOT-490；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PESD5V0X1BCL

Marking：11；Package：DFN1006-2；Extremely low capacitance bidirectional ESD protection diode

1.1Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodein aleadlessultrasmallSOD882(DFN1006-2)Surface-MountedDevice(SMD)plastic packagedesignedtoprotectonesignallinefromthedamagecausedbyESDandother transients.Thec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD5V0X1BCL-Q

Marking：11；Package：SOD882；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeina leadlessultrasmallSOD882(DFN1006-2)Surface-MountedDevice(SMD)plasticpackage, designedtoprotectonesignallinefromthedamagecausedbyESDandothertransients.The c

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMXB350UPE

Marking：11；Package：SOT1215；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?Leadlessultrasmallandultrathi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMXB360ENEA

Marking：11；Package：SOT1215；80 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?LeadlessultrasmallandultrathinS

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMXB43UNE

Marking：11；Package：SOT1215；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?LeadlessultrasmallandthinSMD

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    11

  • 制造商：

    JKL Components Corp.

  • 類別：

    光電器件 > 燈 - 白熾燈，氖燈

  • 包裝：

    盒

  • 類型：

    白熾

  • 顏色：

    透明

  • 額定電壓：

    2.5V

  • 透鏡樣式：

    圓形，帶圓頂

  • 透鏡尺寸：

    RT-1 3/4

  • 引線樣式：

    楔形

  • 描述：

    LAMP INCAND RT-1.75 WEDGE 2.5V

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