General Description

The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation, while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data.

特性 Features

? Dual Drain-Current-Sense Gain Amplifier

??? Preset Gain of 4

??? ±0.5 Accuracy for Sense Voltages Between

??? 75mV and 625mV (MAX11014)

? Common-Mode Sense-Resistor Voltage Range

??? 0.5V to 11V (MAX11014)

??? 5V to 32V (MAX11015)

? Low-Noise Output GATE Bias with ±10mA GATE Drive

? Fast Clamp and Power-On Reset

? 12-Bit DAC Controls MESFET GATE Voltage

? Internal Temperature Sensor/Dual Remote Diode Temperature Sensors

? Internal 12-Bit ADC Measures Temperature and Voltage

? Pin-Selectable Serial Interface

??? 3.4MHz I2C-Compatible Interface

??? 20MHz SPI-/MICROWIRE-Compatible Interface

Applications

??? Cellular Base-Station RF MESFET Bias Controllers

??? Point-to-Point or Point-to-Multipoint Links

??? Industrial Process Control