型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
絲?。?strong>10;Package:DO-214AB;Surface Mount Transient Voltage Suppressor Power 3000Watts FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability. 文件:325.35 Kbytes 頁數(shù):5 Pages | YFWDIODE 佑風微電子 | YFWDIODE | ||
絲?。?strong>10;Package:178M10CP;Three-Terminal Regulator STRUTURE : Silicon Monolithic Intergrated Circuit TYPE : Three-Terminal Regulator FEATURES : Output current up to 0.5A 文件:359.61 Kbytes 頁數(shù):6 Pages | ROHM 羅姆 | ROHM | ||
絲印:10;Package:1206;SURFACE MOUNT ZENER DIODE FEATURES ? For surface mounted application ? Silicon epitaxial planar diode ? Ultra small surface mount package ? Low leakage current ? 2 tolerance device of Vz ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) 文件:427.4 Kbytes 頁數(shù):5 Pages | DIODES 美臺半導體 | DIODES | ||
絲?。?strong>10;Package:SC-89;PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver. 文件:385.86 Kbytes 頁數(shù):15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲?。?strong>10;Package:TO-236AB;500 mA, 50 V NPN resistor-equipped transistors General description NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features ■ 500 mA output current capability ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ ± 10 resistor ratio tole 文件:2.53807 Mbytes 頁數(shù):18 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲印:10;Package:SOT666;NPN/NPN resistor-equipped transistors; R1 = 2.2 k?, R2 = 47k? 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications ? Low current peripheral driver ? Control of IC inputs ? Replaces general-purpose transistors in digital applications Table 1. Pr 文件:912.36 Kbytes 頁數(shù):16 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲印:10;Package:SOT1216;20 V, complementary N/P-channel Trench MOSFET 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Very low threshold 文件:794.67 Kbytes 頁數(shù):20 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲?。?strong>10;Package:SOT1216;20 V, dual P-channel Trench MOSFET 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Leadless ultra small and ultr 文件:732.4 Kbytes 頁數(shù):15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲印:10;Package:SOT1215;30 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Leadless ultra small and ultra thi 文件:734.15 Kbytes 頁數(shù):15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
絲?。?strong>10;Package:SOT1215;12 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Leadless ultra small and thin SMD 文件:741.2 Kbytes 頁數(shù):15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
YANGJIE |
24+ |
SOD-123FL |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購 |
詢價 | ||
CJ(江蘇長電/長晶) |
23+ |
SOD-123FL |
100000 |
原裝現(xiàn)貨、價格優(yōu)勢、可開發(fā)票 |
詢價 | ||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
CJ/長晶 |
24+ |
SOD-123FL |
60000 |
詢價 | |||
YJ |
18000 |
詢價 | |||||
揚州揚杰 |
兩年內(nèi) |
NA |
17769 |
實單價格可談 |
詢價 | ||
YANGJIE(揚杰) |
24+ |
SOD123FL |
50000 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 |
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