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NTMFS0D7N04XMT1G

Marking：0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?SmallFootprint(5x6mm)withCompactDesign ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant Applications ?MotorDrive ?BatteryProtection ?ORing

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMFS0D7N04XL

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features ?LowRDS(on)toMinimizeConductionLoss ?LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike ?LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?HighSwitc

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMFS0D7N04XLT1G

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features ?LowRDS(on)toMinimizeConductionLoss ?LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike ?LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?HighSwitc

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFWS0D7N04XMT1G

Marking：0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?SmallFootprint(5x6mm)withCompactDesign ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant Applications ?MotorDrive ?B

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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