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082

型號：7448991082；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

082N10NS

型號：IPA082N10NF2S；Package：PG-TO220FullPAK；StrongIRFETTM2Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

082N10N

型號：IPD082N10N3G；Package：TO-252；100V N-Channel MOSFET

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Idealforhigh-frequencyswitchingandsynchronousrectification ?VDS=100V ?ID(atVGS=10V)=80A ?RDS(ON)(atVGS=10V)

082N10NS

型號：IPP082N10NF2S；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

082A

型號：NJM082CAG；Package：SOP8；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●WidePowerSupplyRange±4to±18V ●InternalESDProtection HumanBodyModel(HBM)±2000Vtyp. ●HighInputResistance1012Ωtyp. ●WideTemperatureRange-40°Cto125°C ●BipolarTechnology ●HighSlewRate13V/μstyp. ●WideUnityGainBandwidth3MHztyp. ●Package NJM072C/072CA/08

082A

型號：NJM082CAV；Package：SSOP8；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●WidePowerSupplyRange±4to±18V ●InternalESDProtection HumanBodyModel(HBM)±2000Vtyp. ●HighInputResistance1012Ωtyp. ●WideTemperatureRange-40°Cto125°C ●BipolarTechnology ●HighSlewRate13V/μstyp. ●WideUnityGainBandwidth3MHztyp. ●Package NJM072C/072CA/08

082N10LS

型號：BSC082N10LSG；Package：TDSON-8；OptiMOS?? Power-Transistor

082N10NS

型號：IPA082N10NF2S；Package：PG-TO220；StrongIRFETTM 2 Power-Transistor

082N10NS

型號：IPP082N10NF2S；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

082N65S3F

型號：NTB082N65S3F；Package：D2PAK-3；MOSFET ??N??hannel, SUPERFET III, FRFET 650 V, 40 A, 82 m