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絲?。?strong>07；Package：EMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Compleme

文件：302.36 Kbytes 頁(yè)數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>07；Package：VMT3；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Compleme

文件：302.36 Kbytes 頁(yè)數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>07；Package：UMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Compleme

文件：302.36 Kbytes 頁(yè)數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>07；Package：SOD-523；Transient Voltage Suppressors

Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) ◆ Protects One Power or I/O Port ◆ Low leakage current ◆ Low operating and clamping voltages ◆ Solid-stat

文件：589.83 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>07；Package：SOD-523；Transient Voltage Suppressors

◆ -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 6

文件：171.76 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>07；Package：SC-75；PNP resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：1.53812 Mbytes 頁(yè)數(shù)：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲?。?strong>07；Package：SOT23；PNP resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：1.53812 Mbytes 頁(yè)數(shù)：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：07；Package：SOT23；PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144ET-Q 2. Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component c

文件：211.45 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲?。?strong>07；Package：SC-70；PNP resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：1.53812 Mbytes 頁(yè)數(shù)：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：07；Package：SOD-323；Zener Diode

文件：259.24 Kbytes 頁(yè)數(shù)：3 Pages

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