最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

01

型號：FDG6301N；Package：SOT-363；Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

01

型號：OPT4001YMNR；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1Features ?Highprecision,highspeedlight-to-digital conversionoverhighspeedI2Cinterfaceintwo packagevariants ?Precisionopticalfilteringtocloselymatchhuman eyewithexcellentnearinfrared(IR)rejection ?Semi-logarithmicoutputwith9binarylogarithmic full-scalelight

01

型號：OPT4001YMNT；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1Features ?Highprecision,highspeedlight-to-digital conversionoverhighspeedI2Cinterfaceintwo packagevariants ?Precisionopticalfilteringtocloselymatchhuman eyewithexcellentnearinfrared(IR)rejection ?Semi-logarithmicoutputwith9binarylogarithmic full-scalelight

01

型號：PDTA143EE；Package：SC-75；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

01

型號：PDTA143ET；Package：SOT23；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

01

型號：PDTA143EU；Package：SC-70；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

01

型號：PMXB56EN；Package：SOT1215；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?LeadlessultrasmallandthinSMDp

01

型號：RBR5L60ADD；Package：DO-214AC；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype LowVF ●Application Generalrectification

01

型號：RT2856HGQW；Package：WQFN-14AL；6A, 18V, Synchronous Step-Down Converter

GeneralDescription TheRT2856Hisahighefficiency,monolithicsynchronous step-downDC/DCconverterthatcandeliverupto6Aoutput currentfroma4.5Vto18Vinputsupply.TheRT2856H current-modearchitecturewithexternalcompensation allowsthetransientresponsetobeoptimizedover

01

型號：B0520W-ST；0.5A Surface Mount Schottky Barrier Rectifiers