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018N03F2
IPP018N03LF2S

Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

018N10N5
IPP018N10N5

Package：PG-TO220-3；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ?Idealforhighfrequencyswitchingandsync.rec. ?N-channel,normallevel ?OptimizedforFOMOSS ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

019N06NS
IPP019N06NF2S

Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

019N08NS
IPP019N08NF2S

Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

012N08N5
IPT012N08N5

Package：PG-HSOF-8-1；N-channel, normal level

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC61249-2-21

012N08NS
IPT012N08NF2S

Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

013N08LF
IPT013N08NM5LF

Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features ?Idealforhot-swapande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

015N10NS
IPT015N10NF2S

Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

017N10NS
IPT017N10NF2S

Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

017N12N6
IPT017N12NM6

Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitching ?Pb-freeleadplating;RoHSco